4-109 surface mount low noise silicon bipolar transistor chip technical data features ? low noise figure: 1.4 db typical at 1.0 ghz 1.8 db typical at 2.0 ghz ? high associated gain: 18.0 db typical at 1.0 ghz 13.0 db typical at 2.0 ghz ? high gain-bandwidth product: 7.0 ghz typical f t ? low cost surface mount plastic package ? tape-and-reel packaging option available [1] AT-41411 sot-143 plastic note: 1. refer to tape-and-reel packaging for semiconductor devices. description hewlett-packards AT-41411 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the AT-41411 is housed in a low cost low parasitic 4 lead sot-143 surface mount package. the sot-143 is an industry standard and is compatible with high volume surface mount assembly techniques. the 4 micron emitter- to-emitter pitch enables this transistor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w in the 1 to 2 ghz frequency range, makes this device easy to use as a low noise amplifier. the AT-41411 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. pin connections gnd output input v cc 414 5965-8924e
4-110 AT-41411 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 50 p t power dissipation [2,3] mw 225 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [2,4] : q jc = 550 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 1.8 mw/ c for t c > 26 c. 4. see measurements section thermal resistance for more information. part number ordering information part number increment comments AT-41411-tr1 3000 reel AT-41411-blk 100 bulk note: for more information, see tape and reel packaging for semiconductor devices. electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 20 ma f = 1.0 ghz db 14.5 16.5 f = 2.0 ghz 11.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 17.0 v ce = 8 v, i c = 20 ma g 1 db 1 db compressed gain; v ce = 8 v, i c = 20 ma f = 2.0 ghz db 13.0 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.4 f = 2.0 ghz 1.8 f = 4.0 ghz 3.5 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 18.0 f = 2.0 ghz 13.0 f = 4.0 ghz 9.0 f t gain bandwidth product: v ce = 8 v, i c = 20 ma ghz 7.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 notes: 1. refer to packaging section, tape-and-reel packaging for semiconductor devices.
4-111 AT-41411 typical performance, t a = 25 c frequency (ghz) gain (db) i c (ma) figure 2. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v, f = 2.0 ghz. figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c =10ma. gain (db) 0 102030 frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 20 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 24 21 18 15 12 9 6 3 0 4 2 0 nf o (db) 4 2 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 16 14 12 10 g a g a nf o nf o i c (ma) figure 3. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0102030 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 1.0 ghz
4-112 AT-41411 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .85 -30 27.3 23.20 158 -37.7 .013 64 .93 -11 0.5 .58 -112 21.7 12.18 109 -29.1 .035 44 .62 -30 1.0 .49 -156 16.5 6.70 85 -27.2 .044 43 .50 -33 1.5 .49 178 13.2 4.58 71 -25.0 .056 47 .46 -36 2.0 .50 160 10.8 3.45 59 -23.4 .068 47 .45 -41 2.5 .53 153 9.0 2.82 53 -22.5 .075 56 .43 -43 3.0 .55 142 7.5 2.37 43 -21.0 .089 54 .43 -53 3.5 .56 133 6.1 2.02 33 -19.8 .102 52 .44 -63 4.0 .56 121 4.9 1.76 23 -18.8 .115 49 .46 -73 AT-41411 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .65 -46 30.4 33.07 150 -40.0 .010 59 .89 -15 0.5 .46 -137 22.4 13.21 100 -32.0 .025 56 .57 -26 1.0 .43 -175 16.7 6.85 80 -28.4 .038 58 .52 -29 1.5 .44 163 13.3 4.63 67 -26.4 .048 61 .51 -32 2.0 .47 148 10.8 3.47 56 -24.2 .062 61 .50 -37 2.5 .50 140 9.0 2.82 50 -22.9 .071 60 .47 -39 3.0 .53 132 7.5 2.36 40 -20.7 .092 61 .46 -48 3.5 .55 122 6.1 2.02 30 -19.6 .105 57 .45 -60 4.0 .56 112 4.8 1.74 19 -18.3 .122 53 .45 -73 a model for this device is available in the device models section. AT-41411 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.3 .12 4 0.17 0.5 1.3 .10 23 0.17 1.0 1.4 .07 57 0.16 2.0 1.8 .09 -158 0.16 4.0 3.5 .31 -87 0.38
4-113 sot-143 plastic dimensions dimensions are in millimeters (inches) 0.10 (0.004) 0.013 (0.0005) 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.92 (0.036) 0.78 (0.031) e e b c xxx package marking code 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 0.54 (0.021) 0.37 (0.015) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) top view 0.15 (0.006) 0.09 (0.003) 0.69 (0.027) 0.45 (0.018) end view side view
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